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bauteil:transistoren [2019/12/19 23:54] – [JFET, N-Kanal] + MMBFJ113 kmk | bauteil:transistoren [2022/03/28 15:49] – [Table] kmk | ||
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====== Kleinsignal-Transistoren ====== | ====== Kleinsignal-Transistoren ====== | ||
- | In einigen Veröffentlichungen ist es üblich, die Abkürzungen [[http:// | + | In einigen Veröffentlichungen ist es üblich, die Abkürzungen |
* TUN: transistor, universal, NPN | * TUN: transistor, universal, NPN | ||
* TUP: transistor, universal, PNP | * TUP: transistor, universal, PNP | ||
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Universelle Kleinsignaltransistoren in komplementären Paaren: | Universelle Kleinsignaltransistoren in komplementären Paaren: | ||
< | < | ||
- | ^ NPN (TUN) | + | ^ NPN (TUN) ^ PNP (TUP) |
- | | [[https:// | + | | [[https:// |
- | | [[http:// | + | | [[http:// |
- | | [[http://www.nxp.com/documents/ | + | | [[https://www.reichelt.de/index.html? |
- | | [[http://www.nxp.com/documents/ | + | | [[https://www.reichelt.de/index.html? |
- | | [[http:// | + | | [[http:// |
</ | </ | ||
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< | < | ||
^ | ^ | ||
- | | [[http:// | + | | __ BROKEN-LINK: |
| [[http:// | | [[http:// | ||
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
</ | </ | ||
====== Hohe Stromverstärkung ======= | ====== Hohe Stromverstärkung ======= | ||
Eine wichtige Eigenschaft, | Eine wichtige Eigenschaft, | ||
- | < | + | < |
- | ^ Modell | + | ^ Modell |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
+ | </ | ||
+ | Die Stromverstärkung eines einzelnen Transistors kann technisch bedingt nicht beliebig hohe Werte annehmen. Als Ausweg kann man zwei Transistoren so zusammenschalten, | ||
+ | < | ||
+ | ^ Modell | ||
+ | | [[https:// | ||
+ | | [[https:// | ||
</ | </ | ||
+ | |||
+ | |||
====== Hohe Frequenz ====== | ====== Hohe Frequenz ====== | ||
< | < | ||
^ Modell | ^ Modell | ||
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
</ | </ | ||
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< | < | ||
- | ^ Typ ^ Bauform | + | ^ Typ ^ Bauform |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | __BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[https:// | + | | [[https:// |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | __BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[https:// |
- | | [[http:// | + | | [[https:// |
+ | | [[http:// | ||
+ | | [[http:// | ||
</ | </ | ||
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Die Herstellung von P-MOSFETs stößt schneller an technologische Grenzen als bei N-MOSFETs. Das erklärt die geringe Auswahl an Modellen für besonders viel Strom, oder besonders hohe Spannung. Wenn es sich einrichten lässt, sollte man daher P-Kanal MOSFETs in Schaltungen für Hochspannung oder große Leistung vermeiden. | Die Herstellung von P-MOSFETs stößt schneller an technologische Grenzen als bei N-MOSFETs. Das erklärt die geringe Auswahl an Modellen für besonders viel Strom, oder besonders hohe Spannung. Wenn es sich einrichten lässt, sollte man daher P-Kanal MOSFETs in Schaltungen für Hochspannung oder große Leistung vermeiden. | ||
< | < | ||
- | ^ Typ ^ Bauform ^ max. Spannung ^ min. Widerstand ^ max. Strom ^ Kommentar | + | ^ Typ |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | __ BROKEN-LINK: |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
- | | [[https:// | + | | [[https:// |
- | | [[http:// | + | | __ BROKEN-LINK: |
+ | | [[https:// | ||
</ | </ | ||
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< | < | ||
- | ^ Typ | + | ^ Typ |
- | | [[http:// | + | | [[http:// |
- | | [[http://www.nxp.com/documents/data_sheet/BFR30-31.pdf|BFR30]] | + | | [[https://www.onsemi.com/pdf/datasheet/bfr30lt1-d.pdf|BFR30]] |
- | | [[http:// | + | | [[http:// |
- | | [[https:// | + | | [[https:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[https:// |
- | | [[https:// | + | | [[https:// |
+ | | | ||
</ | </ | ||
- | Der extrem | + | Der extre |
+ | m geringe Leckstrom macht die 2N4117A zum traditionellen Mittel der Wahl für kapazitive Sensoren. Die nächstbeste Wahl ist ein MMBF4117. | ||
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< | < | ||
- | ^ Typ ^ Bauform | + | ^ Typ |
- | | [[http:// | + | | [[http:// |
- | | [[http://www.fairchildsemi.com/ds/HG/HGTG12N60A4.pdf|HGTG12N60A4 ]] | + | | [[https://www.onsemi.com/pub/Collateral/HGT1S12N60A4DS-D.PDF|HGTG12N60A4 ]] |
- | | [[http://http:// | + | | [[https:// |
- | | [[http:// | + | | [[https:// |
- | | [[http:// | + | | [[http:// |
- | | [[http:// | + | | [[http:// |
+ | | [[http:// | ||
</ | </ |